Recent interesting articles
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Cond-mat Mesoscale and Nanoscale Physics - recent papers Note: all the papers in a certain month can be listed as e.g. http://xxx.lanl.gov/list/cond-mat.mes-hall/1104 , where 11 stands for 2011 and 04 for April.
Contents |
Szept. 23. - Szept. 29. (2011)
Válogatta: Piszter Gábor
Stacking-dependent band gap and quantum transport in trilayer graphene
W. Bao, L. Jing, J. Velasco Jr, Y. Lee, G. Liu, D. Tran, B. Standley, M. Ayko, S. B. Cronin, D. Smirnov, M. Koshino, E. McCann, M. Bockrath and C. N. Lau
Graphene is an extraordinary two-dimensional (2D) system with chiral charge carriers and fascinating electronic, mechanical and thermal properties. In multilayer graphene, stacking order provides an important yet rarely explored degree of freedom for tuning its electronic properties. For instance, Bernal-stacked trilayer graphene (B-TLG) is semi-metallic with a tunable band overlap, and rhombohedral-stacked trilayer graphene (r-TLG) is predicted to be semiconducting with a tunable band gap. These multilayer graphenes are also expected to exhibit rich novel phenomena at low charge densities owing to enhanced electronic interactions and competing symmetries. Here we demonstrate the dramatically different transport properties in TLG with different stacking orders, and the unexpected spontaneous gap opening in charge neutral r-TLG. At the Dirac point, B-TLG remains metallic, whereas r-TLG becomes insulating with an intrinsic interaction-driven gap ~6 meV. In magnetic fields, well-developed quantum Hall (QH) plateaux in r-TLG split into three branches at higher fields. Such splitting is a signature of the Lifshitz transition, a topological change in the Fermi surface, that is found only in r-TLG. Our results underscore the rich interaction-induced phenomena in trilayer graphene with different stacking orders, and its potential towards electronic applications.
http://www.nature.com/nphys/journal/vaop/ncurrent/full/nphys2103.html
The experimental observation of quantum Hall effect of l = 3 chiral quasiparticles in trilayer graphene
Liyuan Zhang, Yan Zhang, Jorge Camacho, Maxim Khodas and Igor Zaliznyak
The linear dispersion of the low-energy electronic structure of monolayer graphene supports chiral quasiparticles that obey the relativistic Dirac equation and have a Berry phase of π. In bilayer graphene, the shape of the energy bands is quadratic, and its quasiparticles have a chiral degree, l = 2, and a Berry phase of 2π. These characteristics are usually determined from quantum Hall effect (QHE) measurements in which the Berry phase causes shifts in Shubnikov–de Haas (SdH) resistance oscillations. The QHE in graphene also exhibits an unconventional sequence of plateaux of Hall conductivity, SZIGMA_xy, with quantized steps of 4e^2=h, except for the first plateau, where it is governed by the Berry phase. Here, we report magnetotransport measurements in ABC-stacked trilayer graphene, and their variation with carrier density, magnetic field and temperature. Our results provide the first evidence of the presence of l = 3 chiral quasiparticles with cubic dispersion, predicted to occur in ABC-stacked trilayer graphene. The SdH oscillations we observe suggest Landau levels with four-fold degeneracy, a Berry phase of 3π, and the marked increase of cyclotron mass near charge neutrality. We also observe the predicted unconventional sequence of QHE plateaux, SZIGMA_xy = +- 6e^2/h,+-10e^2/h, and so on.
http://www.nature.com/nphys/journal/vaop/ncurrent/abs/nphys2104.html
Observation of an electrically tunable band gap in trilayer graphene
Chun Hung Lui, Zhiqiang Li, Kin Fai Mak, Emmanuele Cappelluti and Tony F. Heinz
A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field. Thicker graphene layers are also highly attractive materials. The ability to produce a band gap in these systems is of great fundamental and practical interest. Both experimental and theoretical investigations of graphene trilayers with the typical ABA layer stacking have, however, revealed the lack of any appreciable induced gap. Here we contrast this behaviour with that exhibited by graphene trilayers with ABC crystallographic stacking. The symmetry of this structure is similar to that of AB-stacked graphene bilayers and, as shown by infrared conductivity measurements, permits a large band gap to be formed by an applied electric field. Our results demonstrate the critical and hitherto neglected role of the crystallographic stacking sequence on the induction of a band gap in few-layer graphene.
http://www.nature.com/nphys/journal/vaop/ncurrent/abs/nphys2102.html
Exchange-Induced Electron Transport in Heavily Phosphorus-Doped Si Nanowires
Tae-Eon Park, Byoung-Chul Min, Ilsoo Kim, Jee-Eun Yang, Moon-Ho Jo, Joonyeon Chang, and Heon-Jin Choi
Heavily phosphorus-doped silicon nanowires (Si NWs) show intriguing transport phenomena at low temperature. As we decrease the temperature, the resistivity of the Si NWs initially decreases, like metals, and starts to increase logarithmically below a resistivity minimum temperature (Tmin), which is accompanied by (i) a zero-bias dip in the differential conductance and (ii) anisotropic negative magnetoresistance (MR), depending on the angle between the applied magnetic field and current flow. These results are associated with the impurity band conduction and electron scattering by the localized spins at phosphorus donor states. The analysis on the MR reveals that the localized spins are coupled antiferromagnetically at low temperature via the exchange interaction.
http://pubs.acs.org/doi/abs/10.1021/nl202535d
Direct Observation of Electron Confinement in Epitaxial Graphene Nanoislands
Soo-hyon Phark, Jérome Borme, Augusto León Vanegas, Marco Corbetta, Dirk Sander, and Jürgen Kirschner
One leading question for the application of graphene in nanoelectronics is how electronic properties depend on the size at the nanoscale. Direct observation of the quantized electronic states is central to conveying the relationship between electronic structures and local geometry. Scanning tunneling spectroscopy was used to measure differential conductance dI/dV patterns of nanometer-size graphene islands on an Ir(111) surface. Energy-resolved dI/dV maps clearly show a spatial modulation, indicating a modulated local density of states due to quantum confinement, which is unaffected by the edge configuration. We establish the energy dispersion relation with the quantized electron wave vector obtained from a Fourier analysis of dI/dV maps. The nanoislands preserve the Dirac Fermion properties with a reduced Fermi velocity.
http://pubs.acs.org/doi/abs/10.1021/nn2028105
Robust Au-Ag-Au Bimetallic Atom-Scale Junctions Fabricated by Self-Limited Ag Electrodeposition at Au Nanogaps
Tai-Wei Hwang and Paul W. Bohn
Atom-scale junctions (ASJs) exhibit quantum conductance behavior and have potential both for fundamental studies of adsorbate- ediated conductance in mesoscopic conductors and as chemical sensors. Electrochemically fabricated ASJs, in particular, show the stability needed for molecular detection applications. However, achieving physically robust ASJs at high yield is a challenge because it is difficult to control the direction and kinetics of metal deposition. In this work, a novel electrochemical approach is reported, in which Au-Ag-Au bimetallic ASJs are reproducibly fabricated from an initially prepared Au nanogap by sequential overgrowth and self-limited thinning. Applying a potential across specially prepared Au nanoelectrodes in the presence of aqueous Ag(I) leads to preferential galvanic reactions resulting in the deposition of Ag and the formation of an atom-scale junction between the electrodes. An external resistor is added in series with the ASJ to control self-termination, and adjusting solution chemical potential (concentration) is used to mediate self-thinning of junctions. The result is long-lived, mechanically stable ASJs that, unlike previous constructions, are stable in flowing solution, as well as to changes in solution media. These bimetallic ASJs exhibit a number of behaviors characteristic of quantum structures, including long-lived fractional conductance states, that are interpreted to arise from two or more quantized ASJs in series.
http://pubs.acs.org/doi/abs/10.1021/nn203404k
Reduced Graphene Oxide (rGO)- Wrapped Fullerene (C60) Wires
Jieun Yang, Mihee Heo, Hyo Joong Lee, Su-Moon Park, Jin Young Kim, and Hyeon Suk Shin
The assembly of reduced graphene oxide (rGO) and fullerene (C60) into hybrid (rGO/C60) wires was successfully performed by employing the liquid-liquid interfacial precipitation method. The rGO sheets spontaneously wrapped C60 wires through the π-π interaction between rGO and C60. Structural characterization of the rGO/C60 wires was carried out by using UV/visible spectroscopy, scanning electron microscopy, and transmission electron microscopy. FET devices with rGO/C60 wires were fabricated to investigate their electrical properties. The Ids-Vg curves of the hybrid wires exhibited p-type semiconducting behavior both in vacuum and in air, indicating hole transport through rGO as a shell layer, whereas pure C60 wires and rGO sheets showed n-type and ambipolar behaviors, respectively, under vacuum. Possible application of the fabricated wires, such as photovoltaic devices, was also demonstrated.
Szept. 15. - Szept. 22. (2011)
Válogatta: Fülöp Gergő
On-demand single-electron transfer between distant quantum dots
R. P. G. McNeil, M. Kataoka, C. J. B. Ford, C. H. W. Barnes, D. Anderson, G. A. C. Jones, I. Farrer & D. A. Ritchie
Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part of the circuit to another. For example, in a quantum computer decoherence and circuit complexity can be reduced by separating quantum bit (qubit) manipulation from measurement and by providing a means of transporting electrons between the corresponding parts of the circuit. Highly controlled tunnelling between neighbouring dots has been demonstrated, and our ability to manipulate electrons in single- and double-dot systems is improving rapidly. For distances greater than a few hundred nanometres, neither free propagation nor tunnelling is viable while maintaining confinement of single electrons. Here we show how a single electron may be captured in a surface acoustic wave minimum and transferred from one quantum dot to a second, unoccupied, dot along a long, empty channel. The transfer direction may be reversed and the same electron moved back and forth more than sixty times—a cumulative distance of 0.25 mm—without error. Such on-chip transfer extends communication between quantum dots to a range that may allow the integration of discrete quantum information processing components and devices.
http://www.nature.com/nature/journal/v477/n7365/full/nature10444.html
Strong back-action of a linear circuit on a single electronic quantum channel
F. D. Parmentier, A. Anthore, S. Jezouin, H. le Sueur, U. Gennser, A. Cavanna, D. Mailly & F. Pierre
The question of which laws govern electricity in mesoscopic circuitsis a fundamental matter that also has direct implications for the quantum engineering of nanoelectronic devices. When a quantum-coherent conductor is inserted into a circuit, its transport properties are modified; in particular, its conductance is reduced because of the circuit back-action. This phenomenon, known as environmental Coulomb blockade, results from the granularity of charge transfers across the coherent conductor1. Although extensively studied for a tunnel junction in a linear circuit2, 3, 4, 5, it is only fully understood for arbitrary short coherent conductors in the limit of small circuit impedances and small conductance reduction6, 7, 8. Here, we investigate experimentally the strong-back-action regime, with a conductance reduction of up to 90%. This is achieved by embedding a single quantum channel of tunable transmission in an adjustable on-chip circuit of impedance comparable to the resistance quantum RK = h/e2 at microwave frequencies. The experiment reveals significant deviations from calculations performed in the weak back-action framework6, 7, and is in agreement with recent theoretical results9, 10. Based on these measurements, we propose a generalized expression for the conductance of an arbitrary quantum channel embedded in a linear circuit.
http://www.nature.com/nphys/journal/vaop/ncurrent/full/nphys2092.html
Spin Polarization Measurement of Homogeneously Doped Fe1–xCoxSi Nanowires by Andreev Reflection Spectroscopy
John P. DeGrave†, Andrew L. Schmitt†, Rachel S. Selinsky†, Jeremy M. Higgins†, David J. Keavney‡, and Song Jin*†
We report a general method for determining the spin polarization from nanowire materials using Andreev reflection spectroscopy implemented with a Nb superconducting contact and common electron-beam lithography device fabrication techniques. This method was applied to magnetic semiconducting Fe1–xCoxSi alloy nanowires with = 0.23, and the average spin polarization extracted from 6 nanowire devices is 28 ± 7% with a highest observed value of 35%. Local-electrode atom probe tomography (APT) confirms the homogeneous distribution of Co atoms in the FeSi host lattice, and X-ray magnetic circular dichroism (XMCD) establishes that the elemental origin of magnetism in this strongly correlated electron system is due to Co atoms.
http://pubs.acs.org/doi/abs/10.1021/nl2026426
Thermoelectricity in Fullerene–Metal Heterojunctions
Shannon K. Yee†, Jonathan A. Malen†, Arun Majumdar*‡, and Rachel A. Segalman*§
[...] Herein, we report molecular junction thermoelectric measurements of fullerene molecules (i.e., C60, PCBM, and C70) trapped between metallic electrodes (i.e., Pt, Au, Ag). Fullerene junctions demonstrate the first strongly n-type molecular thermopower corresponding to transport through the LUMO, and the highest measured magnitude of molecular thermopower to date. While the electronic conductance of fullerenes is highly variable, due to fullerene’s variable bonding geometries with the electrodes, the thermopower shows predictable trends based on the alignment of the LUMO with the work function of the electrodes. Both the magnitude and trend of the thermopower suggest that heterostructuring organic and inorganic materials at the nanoscale can further enhance thermoelectric performance, therein providing a new pathway for designing thermoelectric materials.
http://pubs.acs.org/doi/abs/10.1021/nl2014839
Mobility-Dependent Low-Frequency Noise in Graphene Field-Effect Transistors '
Yan Zhang†, Emilio E. Mendez†‡, and Xu Du†
We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range between 300 and 30 K. We have found that the noise amplitude away from the Dirac point can be described by a generalized Hooge’s relation in which the Hooge parameter αH is not constant but decreases monotonically with the device’s mobility, with a universal dependence that is sample and temperature independent. The value of αH is also affected by the dynamics of disorder, which is not reflected in the DC transport characteristics and varies with sample and temperature. We attribute the diverse behavior of gate voltage dependence of the noise amplitude to the relative contributions from various scattering mechanisms, and to potential fluctuations near the Dirac point caused by charge carrier inhomogeneity. The higher carrier mobility of suspended graphene devices accounts for values of 1/f noise significantly lower than those observed in on-substrate graphene devices and most traditional electronic materials.
http://pubs.acs.org/doi/abs/10.1021/nn202749z
Impurity effects on Fabry-Perot physics of ballistic carbon nanotubes
F. Romeo, R. Citro, A. Di Bartolomeo
We present a theoretical model accounting for the anomalous Fabry-Perot pattern observed in the ballistic conductance of a single-wall carbon nanotubes. Using the scattering field theory, it is shown that the presence of a limited number of impurities along the nanotube can be identified by a measurement of the conductance and their position determined. Impurities can be made active or silent depending on the interaction with the substrate via the back-gate. The conceptual steps for designing a bio-molecules detector are briefly discussed.
http://lanl.arxiv.org/abs/1109.1104v1
Signature of Majorana Fermions in Charge Transport in Semiconductor Nanowires
Chunlei Qu, Yongping Zhang, Li Mao, Chuanwei Zhang
We investigate the charge transport in a semiconductor nanowire that is subject to a perpendicular magnetic field and in partial contact with an s-wave superconductor. We find that Majorana fermions, existing at the interface between superconducting and normal sections of the nanowire within certain parameter region, can induce resonant Andreev reflection of electrons at the interface, which yields a zero energy peak in the electrical conductance of the nanowire. The width of the zero energy conductance peak for different experimental parameters is characterized. While the zero energy peak provides a signature for Majorana fermions in one dimensional nanowires, it disappears in a two-dimensional semiconductor thin film with the same experimental setup because of the existence of other edge states in two dimensions. The proposed charge transport experiment may provide a simple and experimentally feasible method for the detection of Majorana fermions in semiconductor nanowires.
http://xxx.lanl.gov/abs/1109.4108
Integer Quantum Hall Effect in Trilayer Graphene '
A. Kumar1, W. Escoffier1, J. M. Poumirol1, C. Faugeras1, D. P. Arovas2, M. M. Fogler2, F. Guinea3, S. Roche4,5, M. Goiran1, and B. Raquet1
By using high-magnetic fields (up to 60 T), we observe compelling evidence of the integer quantum Hall effect in trilayer graphene. The magnetotransport fingerprints are similar to those of the graphene monolayer, except for the absence of a plateau at a filling factor of ν=2. At a very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder. The measured Hall resistivity plateaus are well reproduced theoretically, using a self-consistent Hartree calculations of the Landau levels and assuming an ABC stacking order of the three layers.
http://prl.aps.org/abstract/PRL/v107/i12/e126806
Shubnikov-de Haas oscillations of a single layer graphene under dc current bias
Zhenbing Tan, Changling Tan, Li Ma, G. T. Liu, L. Lu, and C. L. Yang*
Shubnikov-de Haas (SdH) oscillations under a dc current bias are experimentally studied on a Hall bar sample of single-layer graphene. In dc resistance, the bias current shows the common damping effect on the SdH oscillations and the effect can be well accounted for by an elevated electron temperature that is found to be linearly dependent on the current bias. In differential resistance, a novel phase inversion of the SdH oscillations has been observed with increasing dc bias, namely we observe the oscillation maxima develop into minima and vice versa. Moreover, it is found that the onset bias current, at which a SdH extremum is about to invert, is linearly dependent on the magnetic field of the SdH extrema. These observations are quantitatively explained with the help of a general SdH formula.
http://prb.aps.org/abstract/PRB/v84/i11/e115429
Az alábbiak régiek.
High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires
http://pubs.acs.org/doi/abs/10.1021/nl202180b
Electronic Double Slit Interferometers Based on Carbon Nanotubes
http://pubs.acs.org/doi/abs/10.1021/nl202360h
Observation of Raman G-Peak Split for Graphene Nanoribbons with Hydrogen-Terminated Zigzag Edges
http://pubs.acs.org/doi/abs/10.1021/nl201387x
Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators
http://pubs.acs.org/doi/abs/10.1021/nl201275q
Synthesis of Graphene Nanoribbons Encapsulated in Single-Walled Carbon Nanotubes
http://pubs.acs.org/doi/abs/10.1021/nl2024678
Szept. 08. - Szept. 14. (2011)
Válogatta: Scherübl Zoltán
In situ tunable g factor for a single electron confined inside an InAs quantum dot
W. Liu1, S. Sanwlani1, R. Hazbun2, J. Kolodzey2, A. S. Bracker3, D. Gammon3, and M. F. Doty1
Tailoring the properties of single spins confined in self-assembled quantum dots (QDs) is critical to the development of new optoelectronic logic devices. However, the range of heterostructure engineering techniques that can be used to control spin properties is severely limited by the requirements of QD self-assembly. We demonstrate a new strategy for rationally engineering the spin properties of single confined electrons or holes by adjusting the composition of the barrier between a stacked pair of InAs QDs coupled by coherent tunneling to form a quantum dot molecule (QDM). We demonstrate this strategy by designing, fabricating, and characterizing a QDM in which the g-factor for a single confined electron can be tuned in situ by over 50% with a minimal change in applied voltage.
http://prb.aps.org/abstract/PRB/v84/i12/e121304
Hole-spin initialization and relaxation times in InAs/GaAs quantum dots
F. Fras, B. Eble, P. Desfonds, F. Bernardot, C. Testelin, and M. Chamarro
We study, at low temperature and zero magnetic field, the hole-spin dynamics in InAs/GaAs quantum dots. We measure the hole-spin relaxation time at a time scale longer than the dephasing time (about ten nanoseconds), imposed by the hole-nuclear hyperfine coupling. We use a pump-probe configuration and compare two experimental techniques based on differential absorption. The first one works in the time domain, and the second one is a new experimental method, the dark-bright time-scanning spectroscopy (DTS), working in the frequency domain. The measured hole-spin relaxation times, using these two techniques, are very similar, in the order of TNh≈1 μs. It is mainly imposed by the inhomogeneous hole hyperfine coupling in the hole localization volume. The DTS technique allows us also to measure the hole-spin initialization time τi. The hole spin is initialized by a periodic train of circularly polarized pulses at 76 MHz; we have observed that τi decreases as the power density increases, and we have measured a minimum value of τi≈100 ns in good agreement with a simple model [see B. Eble, P. Desfonds, F. Fras, F. Bernardot, C. Testelin, M. Chamarro, A. Miard and A. Lemaître Phys. Rev. B 81 045322 (2010)].
http://prb.aps.org/abstract/PRB/v84/i12/e125431
Efficient terahertz emission from InAs nanowires
Denis V. Seletskiy1,4,*, Michael P. Hasselbeck1, Jeffrey G. Cederberg2, Aaron Katzenmeyer3, Maria E. Toimil-Molares3, François Léonard3, A. Alec Talin3,†, and Mansoor Sheik-Bahae1
We observe intense pulses of far-infrared electromagnetic radiation emitted from arrays of InAs nanowires. The terahertz radiation power efficiency of these structures is ∼15 times higher than a planar InAs substrate. This is explained by the preferential orientation of coherent plasma motion to the wire surface, which overcomes radiation trapping by total-internal reflection. We present evidence that this radiation originates from a low-energy acoustic surface plasmon mode of the nanowire. This is supported by independent measurements of electronic transport on individual nanowires, ultrafast terahertz spectroscopy, and theoretical analysis. Our combined experiments and analysis further indicate that these plasmon modes are specific to high aspect ratio geometries.
http://prb.aps.org/abstract/PRB/v84/i11/e115421
Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators
Ivana Vobornik*†, Unnikrishnan Manju‡, Jun Fujii†, Francesco Borgatti§, Piero Torelli†, Damjan Krizmancic†, Yew San Hor, Robert J. Cava, and Giancarlo Panaccione†
We complete our recently introduced theoretical framework treating the double-quantum-dot system with a generalized form of Hubbard model. The effects of all quantum parameters involved in our model on the charge-stability diagram are discussed in detail. A general formulation of the microscopic theory is presented and, truncating at one orbital per site, we study the implication of different choices of the model confinement potential on the Hubbard parameters as well as the charge-stability diagram. We calculate the charge-stability diagram keeping three orbitals per site and find that the effect of additional higher-lying orbitals on the subspace with lowest-energy orbitals only can be regarded as a small renormalization of Hubbard parameters, thereby justifying our practice of keeping only the lowest orbital in all other calculations. The role of the harmonic-oscillator frequency in the implementation of the Gaussian model potential is discussed, and the effect of an external magnetic field is identified to be similar to choosing a more localized electron wave function in microscopic calculations. The full matrix form of the Hamiltonian, including all possible exchange terms and several peculiar charge-stability diagrams due to unphysical parameters, is presented in the Appendices, thus emphasizing the critical importance of a reliable microscopic model in obtaining the system parameters defining the Hamiltonian.
http://prb.aps.org/abstract/PRB/v84/i11/e115301
Direct measurement of quantum phases in graphene via photoemission spectroscopy
Choongyu Hwang1, Cheol-Hwan Park2, David A. Siegel1,2, Alexei V. Fedorov3, Steven G. Louie1,2,*, and Alessandra Lanzara1,2,
Quantum phases provide us with important information for understanding the fundamental properties of a system. However, the observation of quantum phases, such as Berry's phase and the sign of the matrix element of the Hamiltonian between two nonequivalent localized orbitals in a tight-binding formalism, has been challenged by the presence of other factors, e.g. , dynamic phases and spin or valley degeneracy, and the absence of methodology. Here, we report a way to directly access these quantum phases, through polarization-dependent angle-resolved photoemission spectroscopy (ARPES), using graphene as a prototypical two-dimensional material. We show that the momentum- and polarization-dependent spectral intensity provides direct measurements of (i) the phase of the band wavefunction and (ii) the sign of matrix elements for nonequivalent orbitals. Upon rotating light polarization by π/2, we found that graphene with a Berry's phase of nπ (n=1 for single- and n=2 for double-layer graphene for Bloch wavefunction in the commonly used form) exhibits the rotation of ARPES intensity by π/n, and that ARPES signals reveal the signs of the matrix elements in both single- and double-layer graphene. The method provides a technique to directly extract fundamental quantum electronic information on a variety of materials.
http://prb.aps.org/abstract/PRB/v84/i12/e125422
Current correlations in the interacting Cooper-pair beam-splitter
J. Rech, D. Chevallier, T. Jonckheere, T. Martin
Using a conserving many-body treatment, we propose an approach allowing the computation of currents and their correlations in interacting multi-terminal mesoscopic systems involving quantum dots coupled to normal and/or superconducting leads. We illustrate our method with the Cooper-pair beam-splitter setup recently proposed, which we model as a double quantum dot with weak interactions, connected to a superconducting lead and two normal ones. Our results suggest that even a weak Coulomb repulsion tends to favor positive current cross-correlations.
http://xxx.lanl.gov/abs/1109.2476
Quantum Hall effect and semimetallic behavior in dual-gated ABA trilayer graphene
E. A. Henriksen, D. Nandi, J. P. Eisenstein
The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field effect device configuration. We find both the quantum Hall effect (QHE) and low-field transport to be distinctly different from the mono- and bilayer graphenes, showing electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When subject to an electric field perpendicular to the sheet, Landau level splittings due to breaking of the lattice mirror symmetry are clearly observed.
http://xxx.lanl.gov/abs/1109.2385
Measuring the complex admittance of a carbon nanotube double quantum dot
S.J. Chorley, J. Wabnig, Z.V. Penfold-Fitch, K.D. Petersson, J. Frake, C.G. Smith, M.R. Buitelaar
We investigate radio-frequency (rf) reflectometry in a tunable carbon nanotube double quantum dot coupled to a resonant circuit. By measuring the in-phase and quadrature components of the reflected rf signal, we are able to determine the complex admittance of the double quantum dot as a function of the energies of the single-electron states. The measurements are found to be in good agreement with a theoretical model of the device in the incoherent limit. Besides being of fundamental interest, our results present an important step forward towards non-invasive charge and spin state readout in carbon nanotube quantum dots.
http://xxx.lanl.gov/abs/1109.1827
Imaging the lateral shift of a quantum-point contact using scanning-gate microscopy
S. Schnez, C. Rössler, T. Ihn, K. Ensslin, C. Reichl, W. Wegscheider
We perform scanning-gate microscopy on a quantum-point contact. It is defined in a high-mobility two-dimensional electron gas of an AlGaAs/GaAs heterostructure, giving rise to a weak disorder potential. The lever arm of the scanning tip is significantly smaller than that of the split gates defining the conducting channel of the quantum-point contact. We are able to observe that the conducting channel is shifted in real space when asymmetric gate voltages are applied. The observed shifts are consistent with transport data and numerical estimations.
http://xxx.lanl.gov/abs/1109.1544
Carbon tips as electrodes for single-molecule junctions
Andres Castellanos-Gomez, Stefan Bilan, Linda A. Zotti, Carlos R. Arroyo, Nicolas Agrait, Juan Carlos Cuevas, Gabino Rubio-Bollinger
We study electron transport through single-molecule junctions formed by an octanethiol molecule bonded with the thiol anchoring group to a gold electrode and the opposing methyl endgroup to a carbon tip. Using the scanning tunneling microscope based break junction technique, we measure the electrical conductance of such molecular junctions. We observe the presence of well-defined conductance plateaus during the stretching of the molecular bridge, which is the signature of the formation of a molecular junction.
http://xxx.lanl.gov/abs/1109.2089
Szept. 01. - Szept. 07. (2011)
Válogatta: Pósa László
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